On die thermal sensor in semiconductor memory device
AssigneeHynix Semiconductor Inc.
InventorChun-Seok Jeong
Life of this patent
Estimating the term…
Abstract
An on die thermal sensor in a semiconductor memory device includes: a reference voltage generating unit for generating a band gap voltage and generating a reference voltage by using the base band gap voltage; a voltage amplifying unit for outputting a temperature voltage by amplifying the band gap voltage; and a temperature information code generating unit for generating a temperature information code corresponding to a voltage level of the temperature voltage, wherein voltage variation of the temperature voltage is amplified as much as a preset amplifying value and a maximum voltage level of the temperature voltage is maintained lower than that of a power supply voltage used in the semiconductor memory device.
Claims21
An on die thermal sensor (ODTS) in a semiconductor memory device, comprising:
- a reference voltage generating unit for generating a band gap voltage and generating a reference voltage by using the band gap voltage;
- a voltage amplifying unit for receiving the reference voltage and amplifying the band gap voltage by a factor of a set amplifying value to generate the temperature voltage, wherein the temperature voltage is controlled to be lower than a set maximum voltage level and the band gap voltage is amplified based on the reference voltage;
- and
- a temperature information code generating unit for generating a temperature information code corresponding to a voltage level of a temperature voltage.
An on die thermal sensor (ODTS) in a semiconductor memory device, comprising:
- a temperature information output unit for outputting a temperature voltage by measuring an internal temperature of the semiconductor memory device, wherein the temperature information output unit comprises:
- a temperature voltage generating unit including
- a reference voltage generating unit for generating a band gap voltage having a voltage level varying according to a temperature variation and generating a reference voltage having a voltage level maintained at a constant value regardless of the temperature variation;
- and
- a voltage amplifying unit for receiving the reference voltage and amplifying the band gap voltage by a factor of a set amplifying value to generate the temperature voltage, wherein the temperature voltage is controlled to be lower than a set maximum voltage level and the band gap voltage is amplified based on the reference voltage;
- and
- a temperature information code generating unit for generating a temperature information code corresponding to a voltage level of the temperature voltage.
Dependencies are inferred from the claim text.