Process for selectively depositing copper thin films on substrates with copper and ruthenium areas via vapor deposition
AssigneeAir Products and Chemicals, Inc.
InventorJohn Anthony Thomas Norman
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Abstract
A process for preparing a multi-layer substrate is described herein. In one embodiment, the process provides a multi-layer substrate comprising a first layer and a second layer where the process comprises the steps of providing the first layer comprising a barrier area and a copper area; and depositing the second layer comprising copper onto the first layer wherein the depositing provides the second layer comprising a first thickness ranging from about 20 Angstroms to about 2,000 Angstroms onto the barrier area and a second thickness ranging from about 0 Angstroms to about 1,000 Angstroms onto the copper area in the first layer wherein the first thickness is greater than the second thickness.
Claims7
A process for preparing a multi-layered substrate comprising a first layer and a second layer, the process comprising:
- providing the first layer comprising a ruthenium area and a copper area;
- and
- depositing the second layer comprising copper onto the first layer using at least one precursor having any one of the formula (Ib) to provide the
- wherein M is copper;
- wherein X is selected from oxygen and NR5;
- wherein R1, R2, R3, and R5 are each independently selected from a hydrogen atom;
- an alkyl having a formula CnH2n+1 wherein n is a number ranging from 1 to 20;
- a fluoroalkyl having the formula CnHxFy wherein the product of the (x+y) equals the product of (2n+1) and n is a number ranging from 1 to 20,
- wherein R4 is selected from an alkyl having a formula CnH2n+1 wherein n is a number ranging from 1 to 20;
- an alkoxy comprising from 1 to 20 carbon atoms;
- and wherein R4 associates with L by having a hydrogen, an atom, or a group removed,
- wherein L is a ligand selected from an alkylnitrile comprising from 2 to 20 carbon atoms;
- a silylnitrile having the formula (R8)3SiCN wherein R8 is each independently an alkyl, an alkoxy, or an amide comprising from 1 to 20 carbon atoms;
- an alkyne comprising from 1 to 20 carbon atoms;
- a silylalkyne having a formula (R8)3SiCCR10 wherein R9 is each independently an alkyl, and R10 is hydrogen or an alkyl comprising from 1 to 20 carbon atoms;
- a silylalkyne having a formula (R11)3SiCCSi(R11)3 wherein R11 is each independently an alkyl comprising from 1 to 20 carbon atoms;
- an alkene, diene, or triene comprising from 1 to 20 carbon atoms;
- a silylalkene having a formula (R12)3SiCR13C(R13)2 wherein R12 is each independently an alkyl, an alkoxy, an aryl, a vinyl, or an amide comprising from 1 to 20 carbon atoms and R13 is each independently a hydrogen, an alkyl comprising from 1 to 20 carbon atoms, a bis(silyl)alkene having the formula (R14)3SiCR13CR13Si(R14)3 wherein R14 is each independently an alkyl comprising from 1 to 20 carbon atoms and R13 is each independently a hydrogen atom or an alkyl comprising from 1 to 20 carbon atoms;
- and an allene comprising from 3 to 20 carbons and wherein L associates with R4 by having a hydrogen, an atom, or a group removed;
- wherein an organometallic bond between M and L is selected from 2 single bonds and 1 single bond;
- and
- wherein the depositing provides the second layer comprising:
- a first thickness ranging from about 20 Angstroms to about 2,000 Angstroms onto the ruthenium area and
- a second thickness onto the copper area that is at least 90% less than the first thickness,
- and wherein at least a portion of the depositing step is conducted in the presence of a reducing agent.
Dependencies are inferred from the claim text.