Pattern forming method, semiconductor device manufacturing method and semiconductor device manufacturing apparatus
AssigneeTokyo Electron Limited
InventorsHidetami Yaegashi, Satoru Shimura, Takashi Hayakawa
Life of this patent
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Abstract
A pattern forming method for forming a pattern serving as a mask, includes a process for forming a first pattern 105, a process for trimming a width of the first pattern 105, a process for forming a boundary layer 106 on a surface of the first pattern 105, a process for forming a second mask material layer 107 on a surface of the boundary layer 106, a process for removing a part of the second mask material layer 107 to expose top portions of the boundary layer 106, and a process for exposing the first pattern 105 and forming a second pattern having the second mask material layer 107 at a top portion thereof by etching the boundary layer 106.
Claims12
A pattern forming method for forming a pattern of a predetermined shape which serves as a mask for etching an etching target layer on a substrate, the method comprising:
- a first pattern forming process for forming a first pattern on the etching target layer by patterning a first mask material layer made of a photoresist;
- a trimming process for reducing a width of the first pattern to a predetermined width;
- a boundary layer forming process for forming a boundary layer, which is made of a material selectively removable with respect to the photoresist, on top portions and sidewall portions of the first pattern and an exposed surface of the etching target layer;
- a second mask material layer forming process for forming a second mask material layer, which is made of a material selectively removable with respect to the boundary layer, on a surface of the boundary layer;
- a second mask material removing process for removing a part of the second mask material layer to expose top portions of the boundary layer;
- a second boundary layer forming process for forming a second boundary layer, which is made of a material selectively removable with respect to the photoresist, on the second mask material layer and the boundary layer;
- a third mask material layer forming process for forming a third mask material layer, which is made of a photoresist and formed in a predetermined pattern, on the second boundary layer;
- an etching process for etching the second boundary layer into the predetermined pattern by using the third mask material layer as a mask and etching the second mask material layer by using the second boundary layer of the predetermined pattern as a mask;
- and
- a boundary layer etching process for exposing the first pattern and forming a second pattern having the second mask material layer on the boundary layer by etching the boundary layer.
A semiconductor device manufacturing method comprising:
- a process for etching an etching target layer on a substrate through a mask,
- wherein the mask is formed by a pattern forming method including:
- a first pattern forming process for forming a first pattern on the etching target layer by patterning a first mask material layer made of a photoresist;
- a trimming process for reducing a width of the first pattern to a predetermined width;
- a boundary layer forming process for forming a boundary layer, which is made of a material selectively removable with respect to the photoresist, on a surface top portions and sidewall portions of the first pattern and an exposed surface of the etching target layer;
- a second mask material layer forming process for forming a second mask material layer, which is made of a material selectively removable with respect to the boundary layer, on a surface of the boundary layer;
- a second mask material removing process for removing a part of the second mask material layer to expose top portions of the boundary layer;
- a second boundary layer forming process for forming a second boundary layer, which is made of a material selectively removable with respect to the photoresist, on the second mask material layer and the boundary layer;
- a third mask material layer forming process for forming a third mask material layer, which is made of a photoresist and formed in a predetermined pattern, on the second boundary layer;
- an etching process for etching the second boundary layer into the predetermined pattern by using the third mask material layer as a mask and etching the second mask material layer by using the second boundary layer of the predetermined pattern as a mask;
- and
- a boundary layer etching process for exposing the first pattern and forming a second pattern having the second mask material layer on the boundary layer by etching the boundary layer.
Dependencies are inferred from the claim text.