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AssigneeSumitomo Mitsubishi Silicon Corporation
InventorsToru Taniguchi, Etsuro Morita, Satoshi Matagawa, Seiji Harada, Isoroku Ono, Mitsuhiro Endo, Fumihiko Yoshida
Estimating the term…
A method of manufacturing a semiconductor wafer, including a step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by holding the semiconductor wafer in a wafer holding hole formed in a carrier plate, and simultaneously polishing a front and back surface of said semiconductor wafer by driving said carrier plate to make a circular motion associated with no rotation on its own axis within a plane parallel with a surface of said carrier plate between a pair of polishing members disposed to face to each other, by using an abrasive body with a semiconductor wafer sink rate different in polishing from that of an abrasive body for one of a polishing member on an upper surface plate and a polishing member on a lower surface plate so as to simultaneously polish both the front and rear surfaces of the semiconductor wafer, or differentiating by differentiating the rotating speed of the upper surface plate from that of the lower surface plate.
A method of manufacturing a semiconductor wafer comprising holding a semiconductor wafer in a wafer holding hole formed in a carrier plate, and simultaneously polishing a front and back surface of said semiconductor wafer by driving said carrier plate to make a circular motion associated with no rotation on its own axis within a plane parallel with a surface of said carrier plate between a pair of polishing members disposed to face to each other, while supplying a polishing agent to said semiconductor wafer, said method being characterized in that either one of said polishing members is made of bonded abrasive body having bonded abrasive grains which have a grain size in a range of 0.1-3.0 μm and the other of said polishing members is made of a polishing surface plate with a polishing cloth extended over a surface thereof facing to said bonded abrasive body so as to differentiate a quantity to be polished off from said semiconductor wafer between said front surface and said back surface thereof.
Dependencies are inferred from the claim text.