US 8,283,250 B2 · Semiconductor device and method of forming a conductive via-in-via structure

Abstract

A semiconductor device is made from a semiconductor wafer containing semiconductor die separated by a peripheral region. A conductive via-in-via structure is formed in the peripheral region or through an active region of the device to provide additional tensile strength. The conductive via-in-via structure includes an inner conductive via and outer conductive via separated by insulating material. A middle conductive via can be formed between the inner and outer conductive vias. The inner conductive via has a first cross-sectional area adjacent to a first surface of the semiconductor device and a second cross-sectional area adjacent to a second surface of the semiconductor device. The outer conductive via has a first cross-sectional area adjacent to the first surface of the semiconductor device and a second cross-sectional area adjacent to the second surface of the semiconductor device. The first cross-sectional area is different from the second cross-sectional area.

Claims25

Dependent claims

A method of making a semiconductor device, comprising:

providing a semiconductor wafer containing a plurality of semiconductor die separated by a peripheral region;
forming a first via in a first surface of the peripheral region;
depositing a first insulating material in the first via;
forming a second via in the first insulating material;
forming a first conductive layer in the second via;
forming a third via in the first conductive layer;
depositing a second insulating material in the third via;
forming a fourth via in the second insulating material;
forming a second conductive layer in the fourth via;
forming a fifth via in a second surface of the peripheral region opposite the first surface of the peripheral region, the fifth via extending through the peripheral region to the second conductive layer;
depositing a third insulating material in the fifth via;
forming a third conductive layer in the fifth via;
forming a sixth via in the second surface of the peripheral region, the sixth via extending through the peripheral region to the first conductive layer;
depositing a fourth insulating material in the sixth via;
and
forming a fourth conductive layer in the sixth via to form a via-in-via structure.

13 more elements

A method of making a semiconductor device, comprising:

providing a semiconductor wafer containing a plurality of semiconductor die separated by a peripheral region;
and
forming a conductive via-in-via structure in the peripheral region of the semiconductor die, the conductive via-in-via structure including an inner conductive through hole via (THV) and outer conductive THV separated by insulating material including:
forming a first via in a first surface of the peripheral region,
depositing a first insulating material in the first via,
forming a second via in the first insulating material,
forming a first conductive layer in the second via,
forming a third via in the first conductive layer,
depositing a second insulating material in the third via,
forming a fourth via in the second insulating material,
forming a second conductive layer in the fourth via,
forming a fifth via in a second surface of the peripheral region opposite the first surface of the peripheral region, the fifth via extending through the peripheral region to the second conductive layer,
depositing a third insulating material in the fifth via,
forming a third conductive layer in the fifth via,
forming a sixth via in the second surface of the peripheral region, the sixth via extending through the peripheral region to the first conductive layer, depositing a fourth insulating material in the sixth via, and
forming a fourth conductive layer in the sixth via.

13 more elements

A method of making a semiconductor device, comprising:

providing a semiconductor wafer containing a plurality of semiconductor die separated by a peripheral region;
and
forming a conductive via-in-via structure in an active region of the semiconductor die, the conductive via-in-via structure including an inner conductive through silicon via (TSV) and outer conductive TSV separated by insulating material with vertical and horizontal portions, the conductive via-in-via structure extending from a first surface of the active region to a second surface of the active region opposite the first surface of the active region.

A method of making a semiconductor device, comprising:

providing a semiconductor wafer containing a plurality of semiconductor die separated by a peripheral region;
and
forming a conductive via-in-via structure in a peripheral region of the semiconductor die, the conductive via-in-via structure including an inner conductive through silicon via (TSV) and outer conductive TSV separated by insulating material, the conductive via-in-via structure extending from a first surface of the peripheral region to a second surface of the peripheral region opposite the first surface of the peripheral region.

Dependencies are inferred from the claim text.

Semiconductor device and method of forming a conductive via-in-via structure

Life of this patent

Semiconductor device and method of forming a conductive via-in-via structure

Life of this patent

Abstract

Claims25