Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition
AssigneeKorea Institute of Industrial Technology
InventorsChaehwan Jeong, Jong Ho Lee, Ho-Sung Kim, Seongjae Boo
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Abstract
In one example, a method for fabricating a solar cell comprising a first electrode, a first-type layer, an intrinsic layer, a second-type layer and a second electrode is disclosed. At least one of the second-type layer, the intrinsic layer and the first-type layer is formed as a crystallized Si layer by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas and silane (SiH4) gas, the mixed gas having a silane gas (SiH4) in a ratio of 0.016 to 0.02.
Claims13
A method for fabricating a solar cell comprising a first electrode, a first-type layer, an intrinsic layer, a second-type layer and a second electrode, the method comprising:
- preparing a first-type Si substrate;
- forming a first electrode on a rear surface of the first-type Si substrate;
- forming an intrinsic layer on a front surface of the first-type Si substrate;
- forming a second-type layer on the intrinsic layer;
- and
- forming a second electrode on the second-type layer,
- wherein at least one of the second-type layer, the intrinsic layer and the first-type layer is formed as a crystallized Si layer by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas and silane (SiH4) gas, the mixed gas having a silane gas (SiH4) in a ratio of 0.016 to 0.02.
Dependencies are inferred from the claim text.