Method for fabricating semiconductor device
AssigneeSumitomo Electric Industries, Ltd.
InventorsKeiichi Yui, Isao Makabe, Ken Nakata, Takamitsu Kitamura, Akira Furuya
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Abstract
A method for fabricating a semiconductor device includes forming an AlN layer on a substrate made of silicon by supplying an Al source without supplying a N source and then supplying both the Al source and the N source, and forming a GaN-based semiconductor layer on the AlN layer after the forming of the AlN layer. The forming of the AlN layer grows the AlN layer so as to satisfy the following: 76500/x0.81<y<53800/x0.83 where x is a thickness of the AlN layer and y is an FWHM of a rocking curve of a (002) plane of the AlN layer.
Claims6
A method for fabricating a semiconductor device comprising:
- forming an AlN layer on a substrate made of silicon by supplying an Al source without supplying a N source and then supplying both the Al source and the N source;
- and
- forming a GaN-based semiconductor layer on the AlN layer after the forming of the AlN layer,
- the forming of the AlN layer growing the AlN layer so as to satisfy the following:
- 76500/x0.81<y<53800/x0.83
- where x is a thickness of the AlN layer and y is an FWHM of a rocking curve of a (002) plane of the AlN layer.
Dependencies are inferred from the claim text.