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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsAkihisa Shimomura, Tatsuya Mizoi, Hidekazu Miyairi, Koichiro Tanaka
Estimating the term…
A manufacturing method of a semiconductor device in which a space between semiconductor films transferred to a plurality of places can be made small. Transfer of a semiconductor film from a bond substrate to a base substrate is carried out a plurality of times. In the case where a semiconductor film transferred first and a semiconductor film transferred later are provided adjacently, the latter transfer is carried out using a bond substrate with its end portion partially removed. The width in a perpendicular direction to the bond substrate used for the later transfer, of the region of the bond substrate corresponding to the removed end portion is larger than the thickness of the semiconductor film which is transferred first.
A manufacturing method of a semiconductor device, comprising the steps of:
A manufacturing method of a semiconductor device, comprising the steps of:
A manufacturing method of a semiconductor device, comprising the steps of:
A manufacturing method of a semiconductor device, comprising the steps of:
A manufacturing method of a semiconductor device, comprising the steps of:
Dependencies are inferred from the claim text.