Ammonia pre-treatment in the fabrication of a memory cell
AssigneeTexas Instruments Incorporated
InventorBernard John Fischer
Life of this patent
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Abstract
A method of manufacturing a memory cell 200. The method comprises forming a memory stack 215. Forming the memory stack includes pre-treating an insulating layer 210 in a substantially ammonia atmosphere for a period of more than 5 minutes to thereby form a pre-treated insulating layer 310. Forming the memory stack also includes depositing a silicon nitride layer on the pre-treated insulating layer.
Claims23
A method of manufacturing an integrated circuit including a memory cell having an oxide-nitride-oxide (ONO) memory stack, the method comprising:
- forming a first silicon oxide layer on a substrate using silane and nitrous oxide through a low-pressure chemical vapor deposition (LPCVD);
- treating the first silicon oxide layer with ammonia in the absence of dichlorosilane for a period of more than 5 minutes at a temperature of about 640 to 660° C.,
- after treating the first silicon oxide layer, forming a silicon nitride layer on the treated first silicon oxide layer using dichlorosilane and ammonia;
- and
- forming a second silicon oxide layer on the silicon nitride layer.
A method of manufacturing an integrated circuit including a memory cell having an oxide-nitride-oxide (ONO) memory stack, the method comprising:
- forming a first silicon oxide layer on a substrate using silane and nitrous oxide through a low-pressure chemical vapor deposition (LPCVD);
- treating the first silicon oxide layer with ammonia in the absence of dichlorosilane for a period of more than 5 minutes at a temperature of about 640 to 660° C.,
- after treating the first silicon layer, forming a silicon nitride layer on the treated first silicon oxide layer using dichlorosilane and ammonia;
- and
- forming a second silicon oxide layer on the silicon nitride layer using silane and nitrous oxide.
Dependencies are inferred from the claim text.