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US 8,283,215 B2Granted
Semiconductor and optoelectronic devices
AssigneeMonolithic 3D Inc.
InventorsZvi Or-Bach, Deepak C. Sekar
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Abstract
A method for fabricating a light-emitting integrated device, comprises overlying three layers, wherein each of the three layers emits light at a different wavelength, and wherein the overlying comprises one of: performing an atomic species implantation, performing a laser lift-off, performing an etch-back, or chemical-mechanical polishing (CMP).
Claims3
A method of forming a display device comprising a plurality of pixels controlled by transistors, the method comprising:
- activating dopants in a monocrystalline layer, wherein said dopants form activated dopant regions,
- subsequently using ion-cut to transfer said monocrystalline layer onto a glass or plastic substrate, and then
- forming said transistors comprising said monocrystalline layer,
- wherein forming said transistors comprises:
- forming a gate, and
- forming a source and drain from said activated dopant regions,
- wherein said transistors are processed on said glass or plastic substrate at a process temperature of less than about 400° C.
4 more elements
Dependencies are inferred from the claim text.