Methods for forming through-substrate conductor filled vias, and electronic assemblies formed using such methods

An electronic assembly formed by a process, comprising:

• providing an initial substrate having an active device region proximate a first surface thereof;
• forming via cavities extending part-way through the initial substrate from the first surface;
• filling the via cavities with a conductive material at least partly coupled to some part of the active device region;
• mounting the initial substrate on a temporary support structure with the first surface facing the temporary support structure and a rear face of the initial substrate exposed;
• removing material from the rear face until a new surface of the initial substrate is exposed, resulting in a thinned substrate, wherein interior ends of the via cavities filled with the conductive material are exposed at the new surface;
• providing a further interconnect region on the new surface making contact to at least some of the interior ends of the via cavities filled with the conductive material, resulting in a final substrate;
• removing the temporary support structure from the final substrate;
• separating individual device or IC assemblies of the final substrate;
• and
• mounting the individual device or IC assemblies on a further circuit board, tape or larger circuit.

A method for forming electronic assemblies, comprising:

• providing an initial semiconductor substrate of a first thickness and having a region of active devices proximate a first surface thereof;
• forming via cavities extending part-way through the initial semiconductor substrate from the first surface;
• filling the via cavities with a conductive metal coupled to some of the active devices;
• mounting the initial semiconductor substrate on a temporary support structure with the first surface facing the temporary support structure and a rear face of the initial semiconductor substrate exposed;
• removing material from the rear face until a new surface of the initial semiconductor substrate is exposed, wherein interior ends of the metal filled via cavities are exposed at the new surface, and wherein removing the material from the rear face results in a thinned semiconductor substrate of a second thickness and still having the region of active devices proximate the first surface;
• providing a further interconnect region on the new surface making contact to some or all of the interior ends of the via cavities filled with the conductive metal, resulting in a final substrate;
• removing the temporary support structure from the final substrate;
• separating individual device or IC assemblies of the final substrate;
• and
• mounting the individual device or IC assemblies on a further circuit board, tape or larger circuit.