Methods utilizing microwave radiation during formation of semiconductor constructions
AssigneeMicron Technology, Inc.
InventorsJohn Smythe, Bhaskar Srinivasan, Ming Zhang
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Abstract
Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500° C. during the exposure to the microwave radiation.
Claims18
A method of forming a semiconductor construction, comprising:
- implanting dopant into semiconductor material, the implanting forming damage regions within the semiconductor material;
- and
- simultaneously activating the dopant and repairing the damage regions by exposing the semiconductor material to microwave radiation having a main spectrum wavelength peak at about 5.2 centimeters, a temperature of the semiconductor material not exceeding about 500° C. during the exposure to the microwave radiation.
A method of forming integrated circuitry, comprising:
- providing first dopant within semiconductor material of a semiconductor construction;
- utilizing a first pulse of microwave radiation having a frequency of about 5.8 gigahertz for a duration suitable to activate only some of the first dopant, while a temperature of the semiconductor material remains at less than or equal to about 500° C.;
- after utilizing the first pulse of microwave radiation;
- providing second dopant within the semiconductor material;
- and
- utilizing a second pulse of microwave radiation having a frequency of about 5.8 gigahertz for a duration suitable to complete activation of the first dopant and to fully activate the second dopant, while a temperature of the semiconductor material remains at less than or equal to about 500° C.
A method of forming integrated circuitry, comprising the following steps in the listed order:
- providing dopant within a semiconductor material;
- utilizing a first pulse of microwave radiation having a frequency of about 5.8 gigahertz for a duration suitable to activate only some of the dopant, while a temperature of the semiconductor material remains at less than or equal to about 500° C.;
- forming one or more additional materials over the semiconductor material;
- and
- utilizing a second pulse of microwave radiation having a frequency of about 5.8 gigahertz for a duration suitable to complete activation of the dopant, while a temperature of the semiconductor material remains at less than or equal to about 500° C.
Dependencies are inferred from the claim text.