Single mask adder phase change memory element
AssigneeInternational Business Machines Corporation
InventorsMatthew J. Breitwisch, Chandrasekharan Kothandaraman, Chung H. Lam
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Abstract
A method of fabricating a phase change memory element within a semiconductor structure includes etching an opening to an upper surface of a bottom electrode, the opening being formed of a height equal to a height of a metal region at a same layer within the semiconductor structure, depositing phase change material within the opening, recessing the phase change material within the opening, and forming a top electrode on the recessed phase change material.
Claims15
A method of fabricating a phase change memory element within a semiconductor structure, the method comprising:
- etching an opening to an upper surface of a bottom electrode, the opening being formed of a height equal to a height of a metal region formed at a same layer within the semiconductor structure;
- depositing phase change material within the opening;
- recessing the phase change material within the opening;
- and
- forming a top electrode on the recessed phase change material.
A method for fabricating a semiconductor structure having a single mask adder phase change memory element embedded therein, the method comprising:
- recessing a plurality of conductive contacts to form a plurality of vias at an upper surface of each conductive contact within a substrate including access circuitry to be connected with the conductive contacts and first dielectric layer formed thereon;
- forming a bottom electrode in each via formed;
- forming a first metal region within a second dielectric layer formed on a respective bottom electrode;
- etching an opening within the second dielectric layer to an upper surface of a respective bottom electrode adjacent to the first metal region;
- depositing phase change material within the opening;
- recessing the phase change material in the opening;
- forming a top electrode on the recessed phase change material;
- and
- forming a second metal region and a via in between the first and the second metal regions to connect the first metal region to the second metal region.
Dependencies are inferred from the claim text.