Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films
AssigneeAmerican Air Liquide, Inc.
InventorsVenkateswara R. Pallem, Christian Dussarrat
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Abstract
Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.
Claims18
A method for depositing a lanthanide-containing film on a semiconductor substrate, the method comprising:
- a) providing a substrate;
- b) providing the lanthanide-containing precursor of the general formula:
- Ln(R1Cp)m(R2—N—C(R4)═N—R2)n,
- wherein:
- Ln is a lanthanide metal having an ionic radius from approximately 0.75 Å to approximately 0.94 Å, a 3+ charge, and a coordination number of 6;
- R1 is selected from the group consisting of H and a C1-C5 alkyl chain;
- R2 is selected from the group consisting of H and a C1-C5 alkyl chain;
- R4 is selected from the group consisting of H and Me;
- n and m range from 1 to 2;
- and
- c) depositing a lanthanide-containing film on the substrate.
A method of forming a lanthanide-containing film on a substrate, the method comprising the steps of:
- providing a reactor having at least one substrate disposed therein;
- introducing at least one lanthanide-containing precursor of the general formula:
- Ln(R1Cp)m(R2—N—C(R4)═N—R2)n,
- wherein:
- Ln is a lanthanide metal having an ionic radius from approximately 0.75 Å to approximately 0.94 Å, a 3+ charge, and a coordination number of 6;
- R1 is selected from the group consisting of H and a C1-C5 alkyl chain;
- R2 is selected from the group consisting of H and a C1-C5 alkyl chain;
- R4 is selected from the group consisting of H and Me;
- n and m range from 1 to 2 into the reactor;
- and contacting the lanthanide-containing precursor and the substrate to form a lanthanide-containing layer on at least one surface of the substrate using a deposition process.
Dependencies are inferred from the claim text.