Manufacturing method of thin film transistor and thin film transistor, and display
AssigneeSony Corporation
InventorsNoriyuki Kawashima, Kazumasa Nomoto, Akihiro Nomoto
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Abstract
A manufacturing method of a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which includes the steps of pattern coating a gate electrode material on the gate insulating film by printing; and carrying out a heat treatment to form the gate electrode resulting from drying for solidification of the pattern coated gate electrode material.
Claims3
A method of manufacturing a thin film transistor comprising an organic semiconductor layer, a gate insulating film and a gate electrode stacked in that order on a substrate, the method comprising:
- forming a gate insulating film on the organic semiconductor layer, the gate insulating film being a single layer of a water-repellant material;
- thereafter subjecting a surface of the gate insulating film to oxygen ashing;
- pattern coating, using a printing process, a gate electrode material on the surface of the gate insulating film that has been subjected to the oxygen ashing;
- and
- heat treating the gate electrode material at a temperature from 100° C. to 150° C. to form the gate electrode.
Dependencies are inferred from the claim text.