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US 8,283,198 B2Granted
Resistive memory and methods of processing resistive memory
AssigneeMicron Technology, Inc.
InventorDavid H. Wells
Life of this patent
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Abstract
Resistive memory and methods of processing resistive memory are described herein. One or more method embodiments of processing resistive memory include forming a resistive memory cell material on an electrode having an access device contact, and forming a heater electrode on the resistive memory cell material after forming the resistive memory cell material on the electrode such that the heater electrode is self-aligned to the resistive memory cell material.
Claims10
A method of processing a resistive memory cell, comprising:
- forming a resistive memory cell material on an electrode having an access device contact;
- and
- forming a heater electrode on a top surface of the resistive memory cell material after forming the resistive memory cell material on the electrode such that the heater electrode is self-aligned to the resistive memory cell material;
- removing a portion of the heater electrode;
- and
- removing only a portion of the top surface of the resistive memory cell material.
3 more elements
A method of processing a memory cell, comprising:
- forming a cell material on an electrode having an access device contact in situ;
- forming a heater electrode on a top surface of the cell material in situ after forming the cell material on the electrode;
- removing a portion of the heater electrode and only a portion of the top surface of the resistive cell material;
- and
- forming a first spacer on the cell material and adjacent a sidewall of the heater electrode such that the first spacer occupies a portion of an area previously occupied by the removed portion of the heater electrode and the removed portion of the cell material.
2 more elements
Dependencies are inferred from the claim text.