Method for producing an optoelectronic component and optoelectronic component

A method for producing an optoelectronic component, the method comprising:

• providing a silicon-based growth substrate having a first coefficient of thermal expansion;
• applying a multilayered nitride-containing buffer layer sequence;
• epitaxially depositing a layer sequence, the layer sequence including an n-doped first partial layer and a p-doped second partial layer, the layer sequence having a second coefficient of thermal expansion that differs from the first coefficient of thermal expansion, and that further comprises an active layer suitable for emitting electromagnetic radiation;
• forming a hole having an opening on a side of the epitaxial layer sequence that is remote from the buffer layer sequence;
• providing an insulation layer on a sidewall of the hole;
• filling the hole with a conductive material, thereby providing electrical contact with the first partial layer at a bottom region of the hole;
• forming contacts in the epitaxially deposited layer sequence;
• applying a carrier substrate on the epitaxially deposited layer sequence provided with contacts, said second partial layer being arranged between said first partial layer and said carrier substrate;
• providing first and second through-holes through the carrier substrate;
• filling the first and second through-holes with an electrically conductive material, thereby providing contact with the first contact layer using the first through-hole and contact with the conductive material that fills the hole formed through the epitaxial layer sequence using the second through-hole;
• removing the growth substrate;
• structuring the multilayered buffer layer sequence in order to increase a coupling-out of electromagnetic radiation;
• and
• making contact with the epitaxially deposited layer sequence.