Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates
AssigneeGroup4 Labs, LLC
InventorsDaniel Francis, Felix Ejeckam, John Wasserbauer, Dubravko Babic
Life of this patent
Estimating the term…
Abstract
Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
Claims29
A method of manufacturing a semiconductor device comprising the steps of:
- (a) providing a layered structure layer, said layered structure layer including at least one layer including a wide-gap semiconductor material;
- (b) depositing a nucleating layer over at least a portion of said layered structure layer, wherein said nucleating layer is formed from a material selected from the group consisting of polycrystalline material, amorphous material, and mixtures thereof;
- and
- (c) depositing a synthetic diamond layer over said nucleating layer.
A method of manufacturing a semiconductor device comprising the steps of:
- (a) providing a first wafer including a substrate layer and a first layered structure layer disposed over said substrate layer, said first layered structure layer including at least one layer including a wide-gap semiconductor material;
- (b) disposing an adhesive layer over said first layered structure layer;
- (c) bonding a second wafer to said adhesive layer;
- (d) removing said substrate layer;
- (e) depositing a nucleating layer over said first layered structure layer, wherein said nucleating layer is formed from a material selected from the group consisting of polycrystalline material, amorphous material, and mixtures thereof;
- (f) depositing a synthetic diamond layer over said nucleating layer;
- (g) removing said second wafer;
- and
- (h) removing said adhesive layer.
A method of manufacturing a semiconductor device comprising the steps of:
- (a) providing a first wafer including a substrate layer and a first layered structure layer disposed over said substrate layer, said first layered structure layer including at least one layer including a wide-gap semiconductor material;
- (b) disposing an adhesive layer over said first layered structure layer;
- (c) bonding a second wafer to said adhesive layer;
- (d) removing said substrate layer;
- (e) removing a part of said first layered structure layer;
- (f) depositing a nucleating layer over said first layered structure layer, wherein said nucleating layer is formed from a material selected from the group consisting of polycrystalline material, amorphous material, and mixtures thereof;
- (g) depositing a synthetic diamond layer over said nucleating layer;
- (h) removing said second wafer;
- and
- (i) removing said adhesive layer.
Dependencies are inferred from the claim text.