Method for fabricating light emitting diode chip
AssigneeLextar Electronics Corporation
InventorsKuo-Lung Fang, Chien-Sen Weng, Chih-Wei Chao
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Abstract
A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.
Claims28
A method of fabricating a light emitting diode chip, comprising:
- forming a semiconductor device layer on a substrate;
- forming a patterned functional layer with multi-layer structure simultaneously on a portion of the semiconductor device layer;
- forming a current spreading layer on a portion of the patterned functional layer and a portion of the semiconductor device layer;
- forming a first electrode on the current spreading layer;
- and
- forming a second electrode on the semiconductor device layer.
Dependencies are inferred from the claim text.