Photoresist processing methods
AssigneeMicron Technology, Inc.
InventorsKevin J. Torek, Todd R. Abbott, Sandra Tagg, Amy Weatherly
Life of this patent
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Abstract
A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with the treated substrate. The method includes selectively exposing a portion of the photoresist to actinic energy and developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate. The treating with a sulfur-containing substance reduces an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating.
Claims23
A photoresist processing method comprising:
- treating a sidewall surface of a gate line with a sulfur-containing substance including a surfactant having a sulfo group and/or including dimethyl sulfoxide, the sidewall surface of the gate line comprising at least one of tungsten silicide and polysilicon;
- applying a positive-tone photoresist on and in contact with the treated sidewall surface of the gate line;
- selectively exposing a portion of the photoresist to actinic energy;
- and
- developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate, the treating reducing an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating.
A photoresist processing method comprising:
- treating a surface of a substrate with a sulfur-containing substance, the treated surface of the substrate including tungsten silicide and polysilicon each simultaneously subjected to the treatment in contact with the tungsten silicide and polysilicon;
- applying a positive-tone photoresist on and in contact with the treated tungsten silicide and polysilicon of the surface of the substrate;
- selectively exposing a portion of the photoresist to actinic energy;
- and
- developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate, the treating reducing an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating.
A photoresist processing method comprising:
- treating a surface of a substrate with a sulfur-containing substance including CF3CF2CF2CF2CF2CF2CH2CH2SO3H;
- applying a positive-tone photoresist on and in contact with the treated surface of the substrate;
- selectively exposing a portion of the photoresist to actinic energy;
- and
- developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate, the treating reducing an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating.
A photoresist processing method comprising:
- treating a surface of a substrate with a sulfur-containing substance including CF3CF2CF2CF2CF2CF2CH2CH2SO3NH4;
- applying a positive-tone photoresist on and in contact with the treated surface of the substrate;
- selectively exposing a portion of the photoresist to actinic energy;
- and
- developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate, the treating reducing an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating.
Dependencies are inferred from the claim text.