Composition for forming resist underlayer film for lithography and production method of semiconductor device

Abstract

There is provided a composition for forming a resist underlayer film that can be homogeneously applied and a sublimate is suppressed during the thermal curing. There is also provided a composition for forming a resist underlayer film having a high selection ratio of dry etching relative to a resist applied thereon. A composition for forming a resist underlayer film for lithography comprising: a polysilane compound having a unit structure of Formula (1): (where R1 and R2 are independently a group of —X—Y (where X is an oxygen atom, a C1-18 alkylene group or a group of —OCnH2n— (where n is an integer of 1 to 18) and Y is a lactone ring or an adamantane ring), or one of R1 and R2 is the group of —X—Y and another thereof is an aryl group, a methyl group, an ethyl group or a C3-6 cycloalkyl group); and an organic solvent.

Dependencies are inferred from the claim text.