Photoacid generator, copolymer, chemically amplified resist composition, and method of forming pattern using the chemically amplified resist composition
AssigneeKorea Kumho Petrochemical Co., Ltd.
InventorsJung Hoon Oh, Sang Jin Kim, Jin Ho Kim, Dae Hyeon Shin
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Abstract
Disclosed are a photoacid generator, a copolymer, a chemically amplified resist composition, and a method of forming a pattern using the chemically amplified resist composition. The photoacid is connected with a main chain of the copolymer, whereby the photoacid is equally dispersed within a resist layer, and characteristics of line edge roughness of a resist pattern is improved.
Claims14
A photoacid generator represented as
- wherein R1 is a C1-C5 alkoxy group,
- R2 and R3 are respectively a linear or branched C1-C20 alkyl group, an aryl group, a linear or branched C1-C20 perfluoroalkyl group, a benzyl group, or a C6-C20 aryl group, and A− is a compound represented as
- wherein X1 is a monocyclic or polycyclic C3-C20 hydrocarbon group, a benzyl group, a C6-C20 aryl group, a C1-C10 alkyl group, a C1-C10 alkoxy group, a C1-C10 hydroxy alkyl group, or a cyano group, at least one hydrogen atom of the monocyclic or polycyclic C3-C20 hydrocarbon group is or is not substituted with an ether group, an ester group, a carbonyl group, an acetal group, a nitrile group, a cyano group, a hydroxy group, a carboxyl group, or an aldehyde group, R is a C1-C10 alkyl group, a C1-C10 alkoxy group, a nitrogen atom, a sulfur atom, or an oxygen atom, and m is a positive integer of 0 to 2.
A copolymer for a chemically amplified resist composition in which a photoacid generator represented as Chemical formula 1 below is connected with a main chain of the copolymer:
- wherein R1 is a C1-C5 alkoxy group,
- R2 and R3 are respectively a linear or branched C1-C20 alkyl group, an aryl group, a linear or branched C1-C20 perfluoroalkyl group, a benzyl group, or a C6-C20 aryl group,
- and A− is a compound represented as
- wherein X1 is a monocyclic or polycyclic C3-C20 hydrocarbon group, a benzyl group, a C6-C20 aryl group, a C1-C10 alkyl group, a C1-C10 alkoxy group, a C1-C10 hydroxy alkyl group, or a cyano group, at least one hydrogen atom of the monocyclic or polycyclic C3-C20 hydrocarbon group is or is not substituted with an ether group, an ester group, a carbonyl group, an acetal group, a nitrile group, a cyano group, a hydroxy group, a carboxyl group, or an aldehyde group, R is a C1-C10 alkyl group, a C1-C10 alkoxy group, a nitrogen atom, a sulfur atom, or an oxygen atom, and m is a positive integer of 0 to 2.
A chemically amplified resist composition including a copolymer and a solvent, in which a photoacid generator represented as Chemical formula 1 below is connected with a main chain of the copolymer:
- wherein R1 is a C1-C5 alkoxy group, R2 and R3 are respectively a linear or branched C1-C20 alkyl group, an aryl group, a linear or branched C1-C20 perfluoroalkyl group, a benzyl group, or a C6-C20 aryl group, and A− is a compound represented as
- wherein X1 is a monocyclic or polycyclic C3-C20 hydrocarbon group, a benzyl group, a C6-C20 aryl group, a C1-C10 alkyl group, a C1-C10 alkoxy group, a C1-C10 hydroxy alkyl group, or a cyano group, at least one hydrogen atom of the monocyclic or polycyclic C3-C20 hydrocarbon group is or is not substituted with an ether group, an ester group, a carbonyl group, an acetal group, a nitrile group, a cyano group, a hydroxy group, a carboxyl group, or an aldehyde group, R is a C1-C10 alkyl group, a C1-C10 alkoxy group, a nitrogen atom, a sulfur atom, or an oxygen atom, and m is a positive integer of 0 to 2.
A method of forming a pattern using a chemically amplified resist composition including a copolymer and a solvent, the method comprising:
- coating a substrate with the chemically amplified resist composition including the copolymer and the solvent, a main chain of the copolymer being connected with a photoacid generator represented as Chemical formula 1 below, and drying the coated composition to form a resist layer;
- selectively exposing the resist layer;
- and
- developing the exposed resist layer:
- wherein R1 is a C1-C5 alkoxy group, R2 and R3 are respectively a linear or branched C1-C20 alkyl group, an aryl group, a linear or branched C1-C20 perfluoroalkyl group, a benzyl group, or a C6-C20 aryl group, and A− is a compound represented as
- wherein X1 is a monocyclic or polycyclic C3-C20 hydrocarbon group, a benzyl group, a C6-C20 aryl group, a C1-C10 alkyl group, a C1-C10 alkoxy group, a C1-C10 hydroxy alkyl group, or a cyano group, at least one hydrogen atom of the monocyclic or polycyclic C3-C20 hydrocarbon group is or is not substituted with an ether group, an ester group, a carbonyl group, an acetal group, a nitrile group, a cyano group, a hydroxy group, a carboxyl group, or an aldehyde group, R is a C1-C10 alkyl group, a C1-C10 alkoxy group, a nitrogen atom, a sulfur atom, or an oxygen atom, and m is a positive integer of 0 to 2.
Dependencies are inferred from the claim text.