Method for fracturing and forming a pattern using circular characters with charged particle beam lithography
AssigneeD2S, Inc.
InventorsAkira Fujimura, Michael Tucker
Life of this patent
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Abstract
In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a plurality of shots of circular or nearly-circular character projection characters, having at least two shots that overlap, can form a non-circular pattern on a surface. Methods for manufacturing a reticle and for manufacturing a substrate such as a silicon wafer by forming non-circular patterns on a surface using a plurality of circular or nearly-circular character projection shots, where at least two shots overlap, is also disclosed.
Claims25
A method for fracturing or mask data preparation comprising the steps of:
- inputting a non-circular target pattern to be formed on a surface;
- and
- determining a plurality of shots of circular or nearly-circular character projection (CP) characters that will form a pattern on the surface using CP charged particle beam lithography, wherein at least two shots in the plurality of shots overlap each other, and wherein the pattern on the surface matches the target pattern within a pre-determined tolerance.
A method for manufacturing a surface using charged particle beam lithography, the method comprising the steps of:
- inputting a non-circular target pattern to be formed on the surface;
- determining a plurality of shots of circular or nearly-circular character projection (CP) characters that will form a pattern on the surface, wherein at least two shots in the plurality of shots overlap each other, and wherein the pattern on the surface matches the target pattern within a pre-determined tolerance;
- and
- forming the pattern on the surface with the plurality of shots.
A method for manufacturing a semiconductor device on a substrate comprising the steps of:
- providing a photomask comprising a set of non-circular patterns, wherein the photomask has been manufactured using a reticle having the non-circular patterns, and wherein the non-circular patterns on the reticle have been formed by exposing a plurality of shots of circular or nearly-circular character projection (CP) characters;
- and
- using optical lithography to form a plurality of patterns on the substrate using the non-circular patterns on the photomask.
A system for fracturing or mask data preparation or proximity effect correction for use with a character projection (CP) charged particle beam writer comprising:
- a non-circular target pattern to be formed on a surface;
- and
- a computation device capable of determining a plurality of shots of circular or nearly-circular CP characters that will form a pattern on the surface, wherein at least two shots in the plurality of shots overlap each other, and wherein the pattern on the surface matches the target pattern within a pre-determined tolerance.
Dependencies are inferred from the claim text.