Photomask blank, photomask, and photomask manufacturing method
AssigneeHoya Corporation
InventorOsamu Nozawa
Life of this patent
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Abstract
A photomask blank has a light-shielding film composed of at least two layers on a transparent substrate. The light-shielding film includes a light-shielding layer made of a material mainly containing tantalum nitride and containing less than 62 at % nitrogen. The material is capable of being dry-etched with a chlorine-based gas containing no oxygen. The light-shielding film further includes a front-surface antireflection layer formed on the light-shielding layer and made of a material not capable of being dry-etched with a chlorine-based gas, but capable of being dry-etched with a fluorine-based gas.
Claims6
A method of manufacturing a photomask comprising the steps of:
- preparing a photomask blank having a light-shielding film, the light-shielding film comprising a light-shielding layer and a front-surface antireflection layer on a transparent substrate;
- dry-etching the front-surface antireflection layer with a fluorine-based gas containing no oxygen using, as a first etching mask, a resist film having a transfer pattern;
- and
- dry-etching the light-shielding layer with a chlorine-based gas containing no oxygen using, as a second etching mask, the front-surface antireflection layer being dry-etched using the first etching mask and having the transfer pattern,
- wherein the light-shielding layer is formed in contact with the transparent substrate, the light shielding layer being made of a material consisting of tantalum and nitrogen, and containing 7 at % or more and 51 at % or less nitrogen, the material being capable of being dry-etched with the chlorine-based gas containing no oxygen,
- wherein the front-surface antireflection layer is formed in contact with the light-shielding layer, the front-surface antireflection layer being made of a material consisting of tantalum and oxygen and containing 50 at % or more oxygen, the material not being capable of being dry-etched with the chlorine-based gas and capable of being dry-etched with the fluorine-based gas.
Dependencies are inferred from the claim text.