Methods for atomic layer deposition of hafnium-containing high-K dielectric materials

A method for depositing a material on a substrate, comprising:

• positioning a substrate on a substrate support within a process chamber containing a chamber body, a chamber lid, and a gas delivery system capable of forming a gas with a circular gas flow;
• flowing at least one carrier gas into the process chamber to form the circular gas flow along an expanding channel formed within a thermally insulating material at a central portion of the chamber lid, wherein a tapered bottom surface extends from the expanding channel to a peripheral portion of the chamber lid and the tapered bottom surface is shaped and sized to substantially cover the substrate, and the gas delivery system contains a first conduit coupled to a first gas inlet within the expanding channel, a second conduit coupled to a second gas inlet within the expanding channel, and the first conduit and the second conduit are positioned to provide the gas with the circular gas flow;
• exposing the substrate to the at least one carrier gas with the circular gas flow;
• flowing a hydrogen source gas and an oxygen source gas into a water vapor generator to form an oxidizing gas containing water vapor, wherein the water vapor generator is in fluid communication with the process chamber through the gas delivery system;
• pulsing sequentially at least one precursor and the water vapor into the at least one carrier gas having the circular gas flow;
• and
• depositing a material containing oxygen and at least one element from the at least one precursor onto the substrate.