Aluminum-plated components of semiconductor material and methods of manufacturing the components
AssigneeLam Research Corporation
InventorsIan J. Kenworthy, Kelly W. Fong, Leonard J. Sharpless
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AssigneeLam Research Corporation
InventorsIan J. Kenworthy, Kelly W. Fong, Leonard J. Sharpless
Estimating the term…
Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.
A method of making an aluminum-plated component of a semiconductor material processing apparatus, comprising:
Dependencies are inferred from the claim text.
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Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber: coatings or surface treatment on the inside of the…
Layered products comprising a layer of metal: all layers being exclusively metallic
Electroplating characterised by the process; Pretreatment or after-treatment of workpieces: after-treatment of electroplated surfaces
Electroplating characterised by the article coated
About 5 months of term left · ends 29 Mar 2027 (estimated)
In the field of semiconductor material processing, semiconductor material processing apparatuses including vacuum processing chambers are used, for example, for etching and chemical vapor deposition (CVD) of various materials on substrates, and for resist stripping. Some of these processes utilize corrosive and erosive process gases and plasma in such processing chambers. It is desirable to minimize particle and/or metal contamination of substrates processed in the chambers. Accordingly, it is desirable that plasma-exposed components of such apparatuses be resistant to wear when exposed to such gases and plasma.
An exemplary embodiment of an aluminum-plated component of a semiconductor material processing apparatus comprises a substrate including at least a first surface; an optional intermediate layer on at least the first surface of the substrate, the intermediate layer including at least a second surface; a high-purity, electrodeposited aluminum plating on the first surface of the substrate or on the second surface of the optional intermediate layer, the aluminum plating comprising, in wt. %, at least 99.00% Al and/or ≦0.10% total transition elements, wherein the first surface or the second surface on which the aluminum plating is disposed is an electrically-conductive surface, and the aluminum plating comprises a process-exposed outer surface of the component.
Another exemplary embodiment of an aluminum-plated component of a semiconductor material processing apparatus comprises a substrate including at least a first surface; an optional intermediate layer on at least the first surface of the substrate, the intermediate layer including at least a second surface; a high-purity, aluminum plating on the first surface of the substrate or on the second surface of the optional intermediate layer, wherein the first surface or the second surface on which the aluminum plating is disposed is an electrically-conductive surface; and an anodized layer formed on the aluminum plating, the anodized layer comprising a process-exposed outer surface of the component.
FIG. 1 illustrates an exemplary embodiment of an aluminum-plated component comprising a substrate and aluminum plating on a surface of the substrate and comprising a process-exposed outer surface of the component.
FIG. 2 illustrates another exemplary embodiment of an aluminum-plated component comprising a substrate, an intermediate layer on the substrate and an aluminum plating on the intermediate layer and comprising a process-exposed outer surface of the component.
FIG. 3 illustrates another exemplary embodiment of an aluminum-plated component comprising a substrate including a base portion and an outer portion integral with the base portion, and an aluminum plating on the outer portion of the substrate and comprising a process-exposed outer surface of the component.
Components of semiconductor material processing apparatuses, methods of making the components, and methods of processing semiconductor materials in processing chambers including one or more of the components are described herein. The components comprise a wear-resistant outer surface that resists wear when the components are used in a plasma processing chamber of a semiconductor material processing apparatus. As used herein, the term “wear resistant” includes resistance to physical and/or chemical attack, such as can be caused by corrosion, erosion and/or corrosion-erosion of process-exposed surfaces.
The components comprise a substrate and a wear-resistant coating on at least one surface of the substrate. The substrate “surface” that is coated can be an exterior surface, or an interior surface that defines a hole, cavity or aperture. The coating can be applied on one or more, or on all, exterior surfaces of the components. The wear-resistant coatings can cover the entire exterior surface of components. The coatings can also be applied on one or more, or on all, accessible interior surfaces of the components.
The wear-resistant coatings comprise an aluminum plating. In some embodiments, the aluminum plating comprises a process-exposed surface of the component. In other embodiments, an anodized layer is formed on the aluminum plating and comprises a process-exposed surface of the component.