Photoresist double patterning
AssigneeLam Research Corporation
InventorsAndrew R. Romano, S. M. Reza Sadjadi
Life of this patent
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Abstract
A method for etching an etch layer formed on a substrate is provided. A first photoresist (PR) mask with first mask features is provided on the etch layer. A protective coating is provided on the first PR mask by a process including at least one cycle. Each cycle includes (a) a deposition phase for depositing a deposition layer over the surface of the first mask features using a deposition gas, and (b) a profile shaping phase for shaping the profile of the deposition layer using a profile shaping gas. A liquid PR material is applied over the first PR mask having the protective coating. The PR material is patterned into a second mask features, where the first and second mask features form a second PR mask. The etch layer is etched though the second PR mask.
Claims10
A method for etching an etch layer formed on a substrate, comprising;
- providing a first photoresist (PR) mask with first mask features on the etch layer;
- forming a protective coating on the first PR mask, comprising at least one cycle including:
- a deposition phase for depositing a deposition layer over the surface of the first mask features using a deposition gas;
- and
- a profile shaping phase for shaping the profile of the deposition layer using a profile shaping gas;
- applying a liquid PR material over the first PR mask having the protective coating;
- patterning the PR material into a second mask features, the first and second mask features forming a second PR mask;
- and
- etching the etch layer though the second PR mask.
A method for etching an etch layer formed on a substrate, comprising;
- providing a first photoresist (PR) mask with first mask features on the etch layer;
- forming a protective coating on the first PR mask, comprising at least one cycle including:
- a deposition phase for depositing a deposition layer over the surface of the first mask features using a deposition gas;
- and
- a profile shaping phase for shaping the profile of the deposition layer using a profile shaping gas;
- applying a liquid PR material over the first PR mask having the protective coating;
- patterning the PR material into a second mask features, the first and second mask features forming a second PR mask;
- and
- etching the etch layer though the second PR mask, wherein the protective coating is formed on a top and sidewalls of the first mask features, but not on a bottom of the first mask features.
A method for etching an etch layer formed on a substrate, comprising;
- providing a first photoresist (PR) mask with first mask features on the etch layer;
- forming a protective coating on the first PR mask, comprising at least one cycle including:
- a deposition phase for depositing a deposition layer over the surface of the first mask features using a deposition gas;
- and
- a profile shaping phase for shaping the profile of the deposition layer using a profile shaping gas;
- applying a liquid PR material over the first PR mask having the protective coating;
- patterning the PR material into a second mask features, the first and second mask features forming a second PR mask;
- and
- etching the etch layer though the second PR mask, wherein the shaping the profile of the deposition layer includes:
- removing a portion of the deposition layer on a bottom of the first mask features.
Dependencies are inferred from the claim text.