Method of processing a substrate, spin unit for supplying processing materials to a substrate, and apparatus for processing a substrate having the same
AssigneeSemes Co., Ltd.
InventorsGil-Hun Song, Pyeng-Jae Park
Life of this patent
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Abstract
In a spin unit for rotating a substrate and a method of processing the substrate, the substrate is secured on a support and is rotated on the support. Processing materials including drying gases, etching solutions and cleaning solutions are selectively supplied onto a bottom surface of the rotating substrate. The same processing materials are also selectively supplied onto a top surface of the substrate. The top and bottom surfaces of the substrate are simultaneously processed by simultaneous supply of the processing materials through the first and second sub-injectors.
Claims13
A spin unit comprising:
- a rotating pair on which a substrate is rotated;
- a support positioned on a peripheral portion of an upper surface of the rotating part and supporting the substrate;
- and
- an injector positioned on the upper surface of the rotating part and spaced apart from a bottom surface of the substrate, the injector selectively injecting processing materials onto the bottom surface of the substrate while the substrate is rotated,
- wherein the processing materials includes drying gases, etching solutions and cleaning solutions and the injector comprises:
- a first sub-injector located at a center portion of the upper surface of the rotating part and spaced apart from a bottom surface of the substrate by a first gap distance, the drying gases being injected onto the bottom surface of the substrate through the first sub-injector;
- and
- a second sub-injector located at a central neighboring portion of the upper surface of the rotating part and spaced apart from the bottom surface of the substrate by a second gap distance, the etching solutions and the cleaning solutions being injected onto the bottom surface of the substrate through the second sub-injector, wherein the second gap distance is greater than the first gap distance.
An apparatus for processing a substrate, comprising:
- a spin unit including a rotating part on which a substrate is rotated, a support positioned on a peripheral portion of an upper surface of the rotating part and supporting the substrate, and a lower injector positioned on the upper surface of the rotating part and spaced apart from a bottom surface of the substrate, the lower injector selectively supplying processing materials onto the bottom surface of the substrate while the substrate is rotated;
- and
- an upper injector located over the substrate, the processing materials being selectively supplied onto a top surface of the substrate through the upper injector while the substrate is rotated,
- wherein the processing materials includes drying gases, etching solutions and cleaning solutions and the lower injector includes:
- a first sub-injector located at a center portion of the upper surface of the rotating part and spaced apart from a bottom surface of the substrate by a first gap distance, the drying gases being injected onto the bottom surface of the substrate through the first sub-injector;
- and a second sub-injector located at a central neighboring portion of the upper surface of the rotating part and spaced apart from the bottom surface of the substrate by a second gap distance, the etching solutions and the cleaning solutions being injected onto the bottom surface of the substrate through the second sub-injector,
- wherein the second gap distance is greater than the first gap distance.
Dependencies are inferred from the claim text.