Manufacturing method of semiconductor apparatus
AssigneeHitachi Kokusai Electric Inc.
InventorKatsuhiko Yamamoto
Life of this patent
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Abstract
The manufacturing method of a semiconductor apparatus has a step for carrying in the substrate into the processing chamber; a step for heating the processing chamber and the substrate to the predetermined temperature; and a gas supply and exhaust step for supplying and exhausting desired gas into and from the processing chamber, wherein the gas supply and exhaust step repeats by the predetermined times a first supply step for supplying silicon-type gas and hydrogen gas into the processing chamber; a first exhaust step for exhausting at least said silicon-type gas from the processing chamber; a second supply step for supplying chlorine gas and hydrogen gas into the processing chamber; and a second exhaust step for exhausting at least the chlorine gas from the processing chamber.
Claims12
A manufacturing method of a semiconductor apparatus for selectively growing an epitaxial film at a silicon surface of a substrate, by storing the substrate having at least the silicon surface and an insulating surface at the surface thereof into a processing chamber, and by using a substrate processing apparatus for heating an atmosphere of the inside of said processing chamber and said substrate to a selected temperature by a heating unit installed at the outside of said processing chamber, comprising:
- a step of carrying in the substrate into said processing chamber;
- a step of heating the atmosphere of the inside of said processing chamber and said substrate to the selected temperature;
- and
- a gas supply and exhaust step of supplying and exhausting desired gas into and from said processing chamber;
- wherein said gas supply and exhaust step comprises:
- a first supply step of supplying silicon-containing gas and hydrogen gas into said processing chamber;
- a first exhaust step of exhausting at least said silicon-containing gas from said processing chamber by supplying a first hydrogen as purge into said processing chamber;
- supplying a first nitrogen gas purge into said processing chamber, and then supplying chlorine-containing gas and nitrogen gas into said processing chamber;
- exhausting the chlorine containing gas from said processing chamber by supplying a second nitrogen gas purge into said processing chamber, and exhausting said nitrogen gas from said processing chamber by supplying a second hydrogen gas purge;
- a second supply step of supplying chlorine-containing gas and hydrogen gas into said processing chamber;
- and
- a second exhaust step of exhausting at least said chlorine-containing gas from said processing chamber;
- and said gas supply and exhaust step is repeated by a selected number of times.
Dependencies are inferred from the claim text.