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US 8,281,739 B2Granted
RF shutter
AssigneeApplied Materials, Inc.
InventorsRobin L. Tiner, Gaku Furuta, Yukinobu Adachi
Life of this patent
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Abstract
The present invention generally comprises an RF shutter assembly for use in a plasma processing apparatus. The RF shutter assembly may reduce the amount of plasma creep below the substrate and shadow frame during processing, thereby reducing the amount of deposition that occurs on undesired surfaces. By reducing the amount of deposition on undesired surfaces, particle flaking and thus, substrate contamination may be reduced.
Claims12
A processing apparatus, comprising:
- a chamber body having an interior defined by a plurality of walls, at least one wall having an opening therethrough that extends a first distance;
- a first RF shutter extending from a first wall and having a continuous length that is equal to the length of the first wall;
- a second RF shutter extending from a second wall and having a length less than the length of the second wall;
- and
- a third RF shutter extending from the second wall having a length that is less than the length of the second wall.
2 more elements
Dependencies are inferred from the claim text.