Flowable oxide deposition using rapid delivery of process gases

A method of filling gaps on a partially manufactured semiconductor substrate, the method comprising:

• introducing steam into a processing chamber, wherein the processing chamber is maintained at a processing chamber pressure level;
• accumulating a silicon containing precursor in an accumulator,
• wherein the accumulator is maintained at an accumulator pressure level,
• and wherein the accumulator pressure level is substantially greater than the processing chamber pressure level;
• rapidly introducing the silicon containing precursor from the accumulator into the processing chamber such that an amount of the silicon containing precursor is provided in the processing chamber relative to the steam during the introduction of the silicon containing precursor;
• and
• forming a flowable silicon-containing film on a surface of the semiconductor substrate to at least partially fill the gaps.