# US 8,277,622 B2 · High uniformity boron doped diamond material

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- Number: US 8,277,622 B2
- Document ID: US8277622B2
- Status: Granted
- Kind: B2
- Application number: 12/523,949
- Filed: 2008-01-22
- Published: 2010-01-21
- Granted: 2012-10-02
- Earliest claimed: 2007-01-22
- Assignees: Element Six Limited
- Inventors: Geoffrey Alan Scarsbrook
- Web page: https://patentgrep.com/patent/US8277622B2

## CPC

- C01B 32/28: After-treatment, e.g. purification, irradiation, separation or recovery
- C23C 16/27: Diamond only
- C23C 16/274: {using microwave discharges}
- C23C 16/278: {doping or introduction of a secondary phase in the diamond}
- C30B 25/105: {by irradiation or electric discharge}
- C30B 25/20: the substrate being of the same materials as the epitaxial layer
- C30B 29/04: Diamond
- G01N 21/87: Investigating jewels (G01N21/88 takes precedence)
- G01N 21/95: characterised by the material or shape of the object to be examined (G01N21/89 - G01N21/91, G01N21/94 take precedence)
- G01N 27/308: {at least partially made of carbon}
- H01J 37/321: {the radio frequency energy being inductively coupled to the plasma}
- H10D 62/405: {Orientations of crystalline planes}
- H10D 62/60: Impurity distributions or concentrations
- H10D 62/8303: {Diamond}
- H10D 62/834: further characterised by the dopants
- H10P 14/00: Formation of materials, e.g. in the shape of layers or pillars
- H10P 14/20: of semiconductor materials
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/2903: {Carbon, e.g. diamond-like carbon}
- H10P 14/3406: {Carbon, e.g. diamond-like carbon}
- H10P 14/3444: {P-type}
- H10P 95/92: {Formation of n- or p-type semiconductors, e.g. doping of graphene}
- G01N 2201/0636: Reflectors
- H01J 2237/08: Ion sources
- H01J 2237/3341: Reactive etching
- Y10T 428/24355: Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

The present invention relates to diamond material comprising a boron doped single crystal diamond substrate layer having a first surface and a boron doped single crystal diamond conductive layer on said first surface, wherein the distribution of boron in the conductive layer is more uniform than the distribution of boron in the substrate layer.

## Claims

### Claim 1

Diamond material comprising a boron doped single crystal diamond substrate layer having a first surface and a boron doped single crystal diamond conductive layer on said first surface, wherein the distribution of boron in the conductive layer is more uniform than the distribution of boron in the substrate layer,
wherein the average concentration of boron in the conductive layer is in a range from 1×1018 atoms/cm3 to 8×1021 atoms/cm3,
wherein the average concentration of boron in the boron doped single crystal diamond substrate layer is in a range from 1×1018 atoms/cm3 to 8×1021 atoms/cm3, and
wherein the conductive layer is CVD diamond and has a thickness of 100 μm or less.

### Claim 2 (depends on 1)

Diamond material according to claim 1, wherein the electrical conductivity of the conductive layer is more uniform than the electrical conductivity of the substrate layer.

### Claim 3 (depends on 1)

Diamond material according to claim 1, wherein the substrate layer is natural IIb diamond, high pressure high temperature (HPHT) synthetic IIb diamond or boron doped CVD diamond.

### Claim 4 (depends on 3)

Diamond material according to claim 3, wherein the substrate layer is CVD diamond.

### Claim 5 (depends on 1)

Diamond material according to claim 1, wherein the average concentration of boron in the substrate layer is in the range from 1018 to 5×1021 atoms/cm3.

### Claim 6 (depends on 1)

Diamond material according to claim 1, wherein the average concentration of boron in the substrate layer is 1×1021 atoms/cm3 or less.

### Claim 7 (depends on 1)

Diamond material according to claim 1, wherein the average concentration of boron in the conductive layer is in a range from 1×1019 to 5×1021 atoms/cm3.

### Claim 8 (depends on 1)

Diamond material according to claim 1, wherein the conductive layer has a thickness of 80 μm or less.

### Claim 9 (depends on 1)

Diamond material according to claim 1, wherein the conductive layer has a thickness of 60 μm or less.

### Claim 10 (depends on 1)

Diamond material according to claim 1, wherein the conductive layer has a thickness of 40 μm or less.

### Claim 11 (depends on 1)

An electrode comprising diamond material as defined in claim 1, wherein an exposed surface of the conductive layer forms a major working surface of the electrode.

### Claim 12 (depends on 11)

An electrochemical cell comprising an electrode as defined in claim 11.

### Claim 13 (depends on 11)

An electrochemical sensor comprising an electrolyte and an electrode as defined in claim 11.