High-sensitivity, high-resolution detector devices and arrays
AssigneeAmplification Technologies, Corp.
InventorsDmitry A. Shushakov, Vitaly E. Shubin
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AssigneeAmplification Technologies, Corp.
InventorsDmitry A. Shushakov, Vitaly E. Shubin
Estimating the term…
Avalanche amplification structures including electrodes, an avalanche region, a quantifier, an integrator, a governor, and a substrate arranged to detect a weak signal composed of as few as several electrons are presented. Quantifier regulates the avalanche process. Integrator accumulates a signal charge. Governor drains the integrator and controls the quantifier. Avalanche amplifying structures include: normal quantifier, reverse bias designs; normal quantifier, normal bias designs; lateral quantifier, normal bias designs; changeable quantifier, normal bias, adjusting electrode designs; normal quantifier, normal bias, adjusting electrode designs; and lateral quantifier, normal bias, annular integrator designs. Avalanche amplification structures are likewise arranged to provide arrays of multi-channel devices. The described invention is expected to be used within photodetectors, electron amplifiers, chemical and biological sensors, and chemical and biological chips with lab-on-a-chip applications. Structures have immediately applicability to devices critical to homeland defense.
An avalanche amplifying structure operating in the Geiger mode comprising:
An avalanche amplifying structure operating in the Geiger mode comprising:
An avalanche amplifying structure operating in the Geiger mode comprising:
Dependencies are inferred from the claim text.