Semiconductor laser device and method of manufacturing the same

A semiconductor laser device comprising:

• two first semiconductor laser elements having different wavelengths with each other formed on a surface of a first conductive type substrate, obtained by stacking a first conductive type first semiconductor layer, a first active layer and a second conductive type second semiconductor layer successively from said first conductive type substrate;
• a first electrode for a second conductive type provided at a side of said second semiconductor layer of one said first semiconductor laser element;
• a second electrode for a second conductive type provided at a side of said second semiconductor layer of another said first semiconductor laser element;
• a second semiconductor laser element obtained by successively stacking a first conductive type third semiconductor layer, a second active layer and a second conductive type fourth semiconductor layer;
• and
• a third electrode for a second conductive type provided at a side of said fourth semiconductor layer of said second semiconductor laser element, wherein
• a first semiconductor laser element portion is constituted by said first conductive type substrate and said two first semiconductor laser elements,
• said first semiconductor laser element portion has a step portion between said two first semiconductor laser elements, and said second semiconductor laser element is arranged on said step portion,
• said step portion has a bottom portion formed at either said first conductive type substrate or said first semiconductor laser element,
• said bottom portion is located at a height different from said surface of said first conductive type substrate on which said first semiconductor layer is formed,
• said third semiconductor layer is electrically connected to said first semiconductor layer by bonding a side of said third semiconductor layer to said bottom portion through a fusible layer,
• a lower surface of said first electrode for a second conductive type opposite to one said first semiconductor laser element, a lower surface of said second electrode for a second conductive type opposite to another said first semiconductor laser element and a lower surface of said third electrode for a second conductive type opposite to said second semiconductor laser element are located on a same plane.