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US 8,274,857 B2Granted
Semiconductor memory device to reduce off-current in standby mode
AssigneeHynix Semiconductor Inc.
InventorSang Il Park
Life of this patent
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Abstract
A semiconductor memory device capable of reducing off-current in a standby mode is provided. The semiconductor memory device includes an enable signal generating unit configured to receive a plurality of address decoding signals and generate a first enable signal to select a first cell block and a second enable signal to select a second cell block, and an internal voltage generating unit for generating an internal voltage by controlling a supply of a first voltage in accordance with the first or second enable signals.
Claims11
A semiconductor memory device comprising:
- an internal voltage generating unit for generating an internal voltage by controlling a supply of a first voltage in accordance with a first enable signal, which is enabled to select a first cell block, and a second enable signal, which is enabled to select a second cell block;
- and
- an I/O switching signal generating unit for outputting an I/O switching signal in response to an I/O switching signal and a precharge signal, wherein the I/O switching signal generating unit is driven by the internal voltage,
- wherein the internal voltage generating unit includes an enable signal input unit for logically combining the first and second enable signals, a level shifting unit for outputting a level shifting signal in response to an output signal of the enable signal input unit, and an internal voltage driving unit for driving the internal voltage by controlling the supply of the first voltage in accordance with an output signal of the level shifting unit.
1 more element
Dependencies are inferred from the claim text.