Level shifter for use with memory arrays
AssigneeInternational Business Machines Corporation
InventorsChad A. Adams, Sharon H. Cesky, Elizabeth L. Gerhard, Jeffrey M. Scherer
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Abstract
In a first aspect, a level shifter circuit for use in a memory array is provided that includes (1) a first voltage domain powered by a first voltage; (2) a second voltage domain powered by a second voltage; (3) level shifter circuitry that converts an input signal from the first voltage domain to the second voltage domain; and (4) isolation circuitry that selectively isolates the first voltage domain from the second voltage domain so as to selectively prevent current flow between the first voltage domain and the second voltage domain. Numerous other aspects are provided.
Claims20
A level shifter circuit for use in a memory array, comprising:
- a first voltage domain powered by a first voltage;
- a second voltage domain powered by a second voltage;
- level shifter circuitry that converts an input signal from the first voltage domain to the second voltage domain;
- and
- isolation circuitry that selectively isolates the first voltage domain from the second voltage domain so as to selectively prevent current flow between the first voltage domain and the second voltage domain.
A memory array comprising:
- read/write circuitry that operates in a first voltage domain;
- a plurality of memory cells that operate in a second voltage domain that is higher than the first voltage domain;
- level shifter circuitry that converts an input signal from the first voltage domain to the second voltage domain;
- and
- isolation circuitry that selectively isolates the first voltage domain from the second voltage domain so as to selectively prevent current flow between the first voltage domain and the second voltage domain.
A method of operating a memory array comprising:
- operating read/write circuitry of the memory array in a first voltage domain;
- operating a plurality of memory cells of the memory array in a second voltage domain that is higher than the first voltage domain;
- employing level shifter circuitry of the memory array to convert an input signal of the memory array from the first voltage domain to the second voltage domain;
- and
- employing isolation circuitry of the memory array to selectively isolate the first voltage domain from the second voltage domain so as to selectively prevent current flow between the first voltage domain and the second voltage domain.
Dependencies are inferred from the claim text.