Mitigation of data corruption from back pattern and program disturb in a non-volatile memory device
AssigneeMicron Technology, Inc.
InventorsVishal Sarin, Jung-Sheng Hoei, Frankie F. Roohparvar
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Abstract
A write algorithm is used to remove errors due to back pattern effects, cell-to-cell capacitive coupling, and program disturb in memory cells. Original data to be programmed is adjusted prior to an initial programming operation of the memory cells. The original data is then programmed into the memory cells in another programming operation. A read adjustment weight data value is associated with each series string of memory cells. The weight data value is used to compensate data read during an initial word line read. The weight data value is updated after each read and read adjustment such that the adjusted weight data value is used on the subsequent read operations.
Claims20
A memory device comprising:
- an array of memory cells;
- and
- control circuitry configured to control operation of the memory device, the control circuitry further configured to adjust original data to be programmed to a set of memory cells of the array of memory cells such that threshold voltages representative of the original data are reduced to create adjusted data, program the adjusted data to the set of memory cells, and program the original data to the set of memory cells.
A memory device comprising:
- an array of memory cells;
- and
- a set of read adjustment registers, each register associated with a different group of memory cells and configured to store a read adjustment weight data value for its respective group of memory cells wherein the read adjustment weight value is used to adjust data read from a memory cell coupled to the associated group of memory cells.
A memory device comprising:
- an array of memory cells;
- and
- control circuitry configured to control operation of the memory device, the control circuitry configured to write original digital bit patterns to a buffer, each digital bit pattern representative of a threshold voltage, the control circuitry further configured to adjust the original digital bit patterns such that the threshold voltages are reduced to create adjusted digital data, program the adjusted digital data to the set of memory cells, and program the original digital bit patterns to the set of memory cells.
Dependencies are inferred from the claim text.