Nonvolatile memory device and method for driving same

A nonvolatile memory device, comprising:

• a memory unit including:
• a first interconnect;
• a second interconnect extending in a direction non-parallel to an extension direction of the first interconnect;
• a memory cell including a resistance change layer provided at an intersection between the first interconnect and the second interconnect, a resistance of the resistance change layer to change due to at least one selected from a voltage applied via the first interconnect and the second interconnect and a current flowing via the first interconnect and the second interconnect;
• and
• a control unit connected to the first interconnect and the second interconnect to supply the at least one selected from the voltage and the current to the resistance change layer,
• the control unit being configured to increase an upper limit of a current supplied to the first interconnect based on a change of a potential of the first interconnect when applying a set operation voltage to the first interconnect in a set operation of changing the resistance change layer from a first state with a first resistance value to a second state with a second resistance value being less than the first resistance value.