Nonvolatile memory device

A nonvolatile memory device, comprising:

• a memory layer having a resistance changeable by performing at least one selected from applying an electric field and providing a current, the storage layer having a first major surface;
• a plurality of first electrodes provided on the first major surface;
• a plurality of probe electrodes disposed to face the plurality of first electrodes, the plurality of probe electrodes having a changeable relative positional relationship with the first electrodes;
• and
• a drive unit connected to the plurality of probe electrodes to record information in the memory layer by causing at least the one selected from the electric field and the current between at least two of the plurality of first electrodes via the plurality of probe electrodes, the electric field having a component parallel to the first major surface, the current flowing in a direction having a component parallel to the first major surface,
• wherein the plurality of first electrodes are arranged in a matrix configuration in a first direction in a plane parallel to the first major surface and a second direction perpendicular to the first direction in the plane, and the plurality of probe electrodes are configured to contact the plurality of first electrodes mutually adjacent in at least one direction selected from the first direction and the second direction.

A nonvolatile memory device, comprising:

• a memory layer having a resistance changeable by performing at least one selected from applying an electric field and providing a current, the storage layer having a first major surface;
• a plurality of first electrodes provided on the first major surface;
• a plurality of probe electrodes disposed to face the plurality of first electrodes, the plurality of probe electrodes having a changeable relative positional relationship with the first electrodes;
• a drive unit connected to the plurality of probe electrodes to record information in the memory layer by causing at least the one selected from the electric field and the current between at least two of the plurality of first electrodes via the plurality of probe electrodes, the electric field having a component parallel to the first major surface, the current flowing in a direction having a component parallel to the first major surface, and
• a second electrode provided on a second major surface on a side of the memory layer opposite to the first major surface, the drive unit further performing at least one selected from applying an electric field and providing a current between the second electrode and at least one of the plurality of probe electrodes.