Write and erase scheme for resistive memory device
AssigneeCrossbar, Inc.
InventorsHagop Nazarian, Sung Hyun Jo
Life of this patent
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Abstract
A method for programming a two terminal resistive memory device, the method includes applying a bias voltage to a first electrode of a resistive memory cell of the device; measuring a current flowing through the cell; and stopping the applying of the bias voltage if the measured current is equal to or greater than a predetermined value.
Claims25
A method for programming a two terminal resistive memory device, the method comprising:
- applying a bias voltage to a first electrode of a resistive memory cell of the device;
- measuring a current flowing through the cell by detecting a rate of a current change with respect to time;
- and
- initiating a termination process to stop applying of the bias voltage if the measured current is equal to or greater than a predetermined value.
A method of forming a conductor filament structure in a switching device, comprising:
- providing a resistive switching device including a top electrode, a switching element, and a bottom electrode;
- applying a predetermined voltage to the device for a predetermined period of time;
- and
- measuring a rate of change of current in the device as a function of time within the predetermined period of time;
- if the rate of change of current is greater than a predetermined value, initiating a termination process to stop applying the predetermined voltage, and
- if the rate of change of current is less than a predetermined value, continue applying the predetermined voltage,
- wherein the conductor filament structure is being formed in the switching element as the predetermined voltage is being applied to the switching device.
A method of forming a conductor filament structure in a switching device, comprising:
- providing a resistive switching device including a top electrode, a switching element, and a bottom electrode;
- applying a predetermined current to the device for a predetermined period of time;
- measuring a rate of change of voltage across the device as a function of time within the predetermined period of time;
- if the rate of change of voltage dropped across the device is greater than a predetermined value, initiating a termination process to stop applying the predetermined current, and
- if the rate of change of voltage dropped across the device is less than a predetermined value, continue applying the predetermined current,
- wherein the conductor filament structure is being formed in the switching element as the current is being applied to the switching device.
A circuit for programming a two terminal resistive memory device, the circuit comprising:
- means for applying a bias voltage to a first electrode of a resistive memory cell of the device;
- means for measuring a current flowing through the cell by detecting a rate of a current change with respect to time;
- and
- means for initiating a termination process to stop applying of the bias voltage if the measured current is equal to or greater than a predetermined value.
Dependencies are inferred from the claim text.