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US 8,274,777 B2Granted
High aspect ratio openings
AssigneeMicron Technology, Inc.
InventorMark W. Kiehlbauch
Life of this patent
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Abstract
A capacitor forming method includes forming an electrically conductive support material over a substrate, with the support material containing at least 25 at % carbon. The method includes forming an opening through at least the support material where the opening has an aspect ratio of at least 20:1 within a thickness of the support material. After forming the opening, the method includes processing the support material to effect a reduction in conductivity, and forming a capacitor structure in the opening.
Claims17
A capacitor forming method comprising:
- forming an electrically conductive support material over a substrate, the support material containing at least 25 at % carbon;
- forming an opening through at least the support material, the opening having an aspect ratio of at least 20:1 within a thickness of the support material;
- after forming the opening, processing the support material to effect a reduction in conductivity of the support material;
- and
- forming a capacitor structure in the opening.
2 more elements
Dependencies are inferred from the claim text.