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US 8,274,766 B2Granted
Magnetic recording element including a thin film layer with changeable magnetization direction
AssigneeKabushiki Kaisha Toshiba
InventorsHideaki Fukuzawa, Yoshihiko Fuji, Hiromi Yuasa, Hitoshi Iwasaki
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Abstract
A magneto-resistive element includes: a first magnetic layer having a substantially fixed magnetization direction; a thin film layer disposed on the first magnetic layer and having at least one of oxide, nitride, oxynitride, and metal; and a second magnetic layer disposed on the thin film layer and having a substantially fixed magnetization direction.
Claims13
A magneto-resistive element, comprising:
- a first magnetic layer having a substantially fixed magnetization direction;
- a thin film layer disposed directly on said first magnetic layer, having a magnetization direction that changes depending on an external magnetic field, and comprising 50 atomic % or more of TiOx, the thin film layer having a thickness of not less than 0.5 nm nor more than 3 nm;
- and
- a second magnetic layer disposed directly on said thin film layer and having a substantially fixed magnetization direction.
1 more element
Dependencies are inferred from the claim text.