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AssigneeTDK Corporation
InventorsShinji Hara, Yoshihiro Tsuchiya, Tsutomu Chou, Hironobu Matsuzawa
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A magneto-resistive effect (MR) element includes a first magnetic layer and a second magnetic layer in which a relative angle of magnetization directions of the first and second magnetic layers changes according to an external magnetic field; and a spacer layer that is provided between the first magnetic layer and the second magnetic layer. The spacer layer contains gallium nitride (GaN) as a main component. A thin film magnetic head according to one embodiment of the present invention is provided with the following structures: an MR element mentioned above that has a first magnetic layer and a second magnetic layer, as free layers, in which the magnetization direction in the two layers changes according to the external magnetic field; a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS); the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS; and a sense current flows in an orthogonal direction to a layer surface of the MR element.
A magneto-resistive effect element (MR element) comprising:
A magneto-resistive effect element (MR element) comprising:
A magneto-resistive effect element (MR element) comprising:
A magneto-resistive effect element (MR element) comprising:
Dependencies are inferred from the claim text.