Solid-state imaging device driving method

A solid-state imaging device, comprising:

• a photosensitive region having a plurality of photosensitive cells which are two-dimensionally arranged in first and second directions, each photosensitive cell including a photoelectrical conversion element for generating a signal charge corresponding to an intensity of incident light, a transfer transistor for reading the signal charge in the photoelectrical conversion element and transferring the read signal charge to a signal charge detection section, an amplifier transistor for outputting an electrical signal corresponding to changes in potential of the signal charge detection section, and a reset transistor for resetting the potential of the floating diffusion layer section to a predetermined initial value;
• and
• a line for supplying a selected voltage to the drain of the reset transistor of each photosensitive cell,
• wherein
• the line supplies, as the selected voltage, a first voltage and a second voltage which is lower than the first voltage,
• a potential of the second voltage is higher than zero potential,
• the drain of the reset transistor of a given one of the photosensitive cells and the drain of the amplifier transistor of said given photosensitive cell are connected with each other, and
• a potential of a channel, which is formed beneath a gate of the reset transistor of said given one of the photosensitive cells when a low level voltage is applied to the gate of the reset transistor, is lower than the second voltage.

A method for driving a solid-state imaging device, said solid state imaging device including a photosensitive region having a plurality of photosensitive cells which are two-dimensionally arranged in first and second directions, each photosensitive cell including a photoelectrical conversion element for generating a signal charge corresponding to an intensity of incident light, a transfer transistor for reading the signal charge in the photoelectrical conversion element and transferring the read signal charge to a signal charge detection section, an amplifier transistor for outputting an electrical signal corresponding to changes in potential of the signal charge detection section, and a reset transistor for resetting the potential of the floating diffusion layer section to a predetermined initial value;

• a line for supplying a selected voltage to the drain of the reset transistor of each photosensitive cell;
• a plurality of transfer control lines for controlling gates of the transfer transistors and a plurality of reset control lines for controlling gates of the reset transistors are provided so as to extend in the first direction;
• and a plurality of output signal lines are connected to sources of the amplifier transistors in the second direction, wherein the line supplies, as the selected voltage, a first voltage and a second voltage which is lower than the first voltage, and a potential of the second voltage is higher than zero potential, and a potential of a channel, which is formed beneath a gate of the reset transistor of said given one of the photosensitive cells when a low level voltage is applied to the gate of the reset transistor of said given one of the photosensitive cells, is lower than the second voltage
• the method comprising:
• fixing the line at the first voltage for a predetermined time period;
• applying a high level pulse to the reset transistor of said given one of the photosensitive cells to reset the signal charge detection section of said given one of the photosensitive cells;
• applying a high level pulse to the transfer transistor of said given one of the photosensitive cells to transfer the signal charges in the photoelectrical conversion element to the signal charge detection section of said given one of the photosensitive cells;
• and
• returning the voltage of the line to the second voltage to read out the signal charge in the photoelectrical conversion element of said given one of the photosensitive cells.