Semiconductor device and a method of manufacturing the same
AssigneeRenesas Electronics Corporation
InventorsYuki Koide, Masataka Minami
Life of this patent
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Abstract
A semiconductor device having redistribution interconnects in the WPP technology and improved reliability, wherein the redistribution interconnects have first patterns and second patterns which are electrically separated from each other within the plane of the semiconductor substrate, the first patterns electrically coupled to the multi-layer interconnects and the floating second patterns are coexistent within the plane of the semiconductor substrate, and the occupation ratio of the total of the first patterns and the second patterns within the plane of the semiconductor substrate, that is, the occupation ratio of the redistribution interconnects is 35 to 60%.
Claims9
A semiconductor device comprising:
- a plurality of multi-layer interconnects formed over a semiconductor substrate;
- a passivation film formed over the semiconductor substrate to cover the multi-layer interconnects;
- a plurality of redistribution interconnects formed over the passivation film;
- and
- a first insulating film formed over the passivation film so as to cover the redistribution interconnects,
- wherein the plurality of redistribution interconnects have first patterns and second patterns which are electrically separated from each other within the plane of the semiconductor substrate,
- wherein each of the first patterns is electrically coupled to a corresponding multi-layer interconnect in a first opening portion formed in the passivation film over a part of the uppermost-level interconnect of the corresponding multi-layer interconnect,
- wherein the second patterns are electrically separated from the multi-layer interconnects,
- wherein a part of each of the first patterns is exposed in a second opening portion formed in the first insulating film over the part of the first pattern, and
- wherein the first patterns and the second patterns are coexistent within the plane of the semiconductor substrate.
Dependencies are inferred from the claim text.