Semiconductor device with interface peeling preventing rewiring layer

A semiconductor device, comprising:

• a semiconductor substrate;
• an electrode pad formed on the semiconductor substrate;
• a first insulation film formed on the semiconductor substrate, wherein the first insulation film has a first aperture which exposes the electrode pad;
• a first conductor film formed on the electrode pad and the first insulation film, the first conductor film having a first outer edge portion and a second outer edge portion, wherein the first conductor film extends from the first outer edge portion to the second outer edge portion and comprises a plurality of copper layers which are stacked so that the second outer edge portion of the first conductor film is formed to have a stepped structure;
• an external electrode electrically connected to the first conductor film at a position on the first conductor film that is closer to the second outer edge portion than to the first outer edge portion;
• and
• a sealing resin which covers the first conductor film and the first insulation film.