High frequency interconnect pad structure

An integrated circuit structure comprising:

• a last metal interconnect layer of the integrated circuit structure having an active portion and a floating portion;
• a passivation layer over the last metal interconnect layer;
• a capping layer over the passivation layer comprising an interconnect bond pad overlying the floating portion and the active portion of the last metal interconnect layer, wherein the floating portion is directly under a region of the interconnect bond pad that is capable of receiving a permanent electrical connection;
• a via through the passivation layer connected to the active portion and the interconnect bond pad;
• and
• a high frequency circuit having a terminal for a high frequency signal, wherein the terminal is connected to the active portion, wherein the floating portion remains floating when the high frequency signal is present on the active portion, and wherein the floating portion has a first pattern having metal segments and spaces therebetween;
• and
• a next to last patterned metal layer having a second pattern directly under the region of the interconnect bond pad, the second pattern having floating metal segments aligned to the spaces of the first pattern such that the floating metal segments of the second pattern are located directly under the spaces of the first pattern, and wherein the placement of the metal segments of the second pattered is defined by the spaces of the first pattern so that the first and second patterns are misaligned.