Semiconductor device having stacked multiple substrates and method for producing same

A method for producing a semiconductor device, comprising:

• providing a first semiconductor substrate having a first surface on which a first electrode pad is provided at a first end portion of the first surface;
• providing a second semiconductor substrate having second and third surfaces, the second semiconductor substrate being stacked on the first semiconductor substrate so that the first surface and the second surface face each other, the second semiconductor substrate being shifted in a first direction so as to expose the first electrode pad, a second electrode pad being formed on a second end portion of the third surface and in the vicinity of the first electrode pad, and a third electrode pad being formed on a third end portion of the third surface, the third end portion being opposite to the second end portion;
• providing a third semiconductor substrate having fourth and fifth surfaces, the third semiconductor substrate being stacked on the second semiconductor substrate so that the third and fourth surfaces face each other, the third semiconductor substrate being shifted in a second direction opposite to the first direction so as to expose the third electrode pad, and a fourth electrode pad being formed on a fourth end portion of the fifth surface and in the vicinity of the third electrode pad;
• forming a first conductive layer at the first and second end portions to electrically connect between the first and second electrode;
• forming a second conductive layer between the third and fourth surfaces to electrically connect between the second and third electrode pads;
• and
• forming a third conductive layer at the third and fourth end portions to electrically connect between the third and fourth electrode pads, wherein
• the first through fourth electrode pads are electrically connected to each other by the first through third conductive layers.