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US 8,274,136 B2Granted
Semiconductor patch antenna
AssigneeWorcester Polytechnic Institute
InventorsSergey N. Makarov, Reinhold Ludwig, Francesca Scire-Scappuzzo, John McNeill
Life of this patent
Estimating the term…
Abstract
A semiconductor patch antenna for microwave radiation having a wide pin-junction or pn-junction with the depletion region or embodiments having a separating buried oxide (SiO2) layer between p- and n-doped regions as the natural resonator volume. Embodiments that do not include a metal ground plane and/or a metal patch are disclosed.
Claims10
An antenna comprising:
- a p-doped layer;
- and
- an n-doped layer;
- said n-doped layer disposed below said a p-doped layer and constituting a pn junction;
- a depletion region of the pn junction being a resonating volume of the antenna;
- the antenna not including a metal ground plane;
- wherein the antenna is a patch antenna.
4 more elements
An antenna comprising:
- a p-doped layer;
- an n-doped layer;
- said n-doped layer disposed below said a p-doped layer;
- the antenna not including a metal ground plane;
- and
- an intrinsic semiconductor layer disposed between and substantially in contact with said p-doped layer and said n-doped layer.
3 more elements
An antenna comprising:
- a p-doped layer;
- an n-doped layer;
- said n-doped layer disposed below said a p-doped layer;
- the antenna not including a metal ground plane;
- and
- an oxide layer disposed between and substantially in contact with said p-doped layer and said n-doped layer.
3 more elements
An antenna comprising:
- a p-doped layer;
- and an n-doped layer;
- said n-doped layer disposed below said a p-doped layer and constituting a pn junction;
- a depletion region of the pn junction being a resonating volume of the antenna;
- the antenna not including a metal patch;
- wherein the antenna is a patch antenna.
3 more elements
An antenna comprising:
- a p-doped layer;
- an n-doped layer;
- said n-doped layer disposed below said a p-doped layer;
- the antenna not including a metal patch;
- and
- an intrinsic semiconductor layer disposed between and substantially in contact with said p-doped layer and said n-doped layer.
3 more elements
An antenna comprising:
- a p-doped layer;
- an n-doped layer;
- said n-doped layer disposed below said a p-doped layer;
- the antenna not including a metal patch;
- and
- an oxide layer disposed between and substantially in contact with said p-doped layer and said n-doped layer.
3 more elements
Dependencies are inferred from the claim text.