# US 8,274,130 B2 · Punch-through diode steering element > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,274,130 B2 - Document ID: US8274130B2 - Status: Granted - Kind: B2 - Application number: 12/582,509 - Filed: 2009-10-20 - Published: 2011-04-21 - Granted: 2012-09-25 - Earliest claimed: 2009-10-20 - Assignees: SanDisk 3D LLC - Inventors: Andrei Mihnea; Deepak C. Sekar; George Samachisa; Roy Scheuerlein; Li Xiao - Web page: https://patentgrep.com/patent/US8274130B2 ## CPC - G11C 13/0007: {comprising metal oxide memory material, e.g. perovskites} - G11C 13/003: {Cell access} - G11C 13/0069: {Writing or programming circuits or methods} - H10B 63/10: Phase change RAM [PCRAM, PRAM] devices - G11C 2013/0073: {Write using bi-directional cell biasing} - G11C 2213/32: Material having simple binary metal oxide structure - G11C 2213/34: Material includes an oxide or a nitride - G11C 2213/72: Array wherein the access device being a diode - G11C: STATIC STORES (semiconductor memory devices H10B) - H10B: ELECTRONIC MEMORY DEVICES ## Abstract A storage system and method for forming a storage system that uses punch-through diodes as a steering element in series with a reversible resistivity-switching element is described. The punch-through diode allows bipolar operation of a cross-point memory array. The punch-through diode may have a symmetrical non-linear current/voltage relationship. The punch-through diode has a high current at high bias for selected cells and a low leakage current at low bias for unselected cells. Therefore, it is compatible with bipolar switching in cross-point memory arrays having resistive switching elements. The punch-through diode may be a N+/P−/N+ device or a P+/N−/P+ device. ## Claims ### Claim 1 A non-volatile storage device comprising: a first plurality of conductors; a second plurality of conductors, one of the first conductors and one of the second conductors define a pair of conductors; a plurality of memory cells, each of the memory cells residing between one pair of the pairs of conductors, each of the memory cells including: a reversible resistivity-switching element; and a diode in series with the reversible resistivity-switching element, the diode including a first region of a semiconductor material that is heavily-doped with an impurity having a first conductivity, the diode including a second region of a semiconductor material that is lightly-doped with an impurity having a second conductivity, the diode including a third region of a semiconductor material that is heavily-doped with an impurity having the first conductivity, the second region resides between the first region and the third region, the doping profile in the first region and the third region is graded with the doping concentration being lowest near the second region. ### Claim 2 (depends on 1) The non-volatile storage device of claim 1, wherein the diode has a symmetrical current-voltage relationship. ### Claim 3 (depends on 1) The non-volatile storage device of claim 1, wherein the first region has a first doping concentration, the third region has a second doping concentration that is approximately the same as the first doping concentration. ### Claim 4 (depends on 1) The non-volatile storage device of claim 1, wherein the first region has a first doping concentration, the second region has a second doping concentration, the third region has a third doping concentration, the first doping concentration and the third doping concentration are each at least 1000 times greater than the second doping concentration. ### Claim 5 (depends on 1) The non-volatile storage device of claim 1, wherein the semiconductor material in the first region, the semiconductor material in the second region, and the semiconductor material in the third region each include one or more of silicon and germanium. ### Claim 6 (depends on 1) The non-volatile storage device of claim 1, wherein the semiconductor material in the first region, the semiconductor material in the second region, and the semiconductor material in the third region each include silicon. ### Claim 7 (depends on 1) The non-volatile storage device of claim 1, wherein the reversible resistivity-switching element includes a transition metal oxide. ### Claim 8 (depends on 1) The non-volatile storage device of claim 1, wherein the reversible resistivity-switching element has an upper electrode and a lower electrode, the upper electrode includes titanium nitride, the lower electrode includes titanium nitride. ### Claim 9 (depends on 1) The non-volatile storage device of claim 1, wherein the memory cell further includes a silicide region between the diode and the reversible resistivity-switching element. ### Claim 10 (depends on 9) The non-volatile storage device of claim 9, wherein the memory cell further includes an electrical contact to the diode and a silicide region between the diode and the electrical contact. ### Claim 11 (depends on 1) The non-volatile storage device of claim 1, further comprising one or more management circuits in communication with the bit lines and the word lines, the one or more management circuits read, SET and RESET a selected memory cell, the second region of the diode of the selected memory cell is depleted when being read, SET, or RESET. ### Claim 12 (depends on 1) The non-volatile storage device of claim 1, wherein the diode further comprises a thin layer between the first region and the second region to prevent migration of dopant from the heavily-doped first region to the lightly-doped second region. ### Claim 13 (depends on 12) The non-volatile storage device of claim 12, wherein the thin layer is germanium. ### Claim 14 (depends on 13) The non-volatile storage device of claim 13, wherein the thin layer is a silicon-germanium alloy with at least 10% germanium. ### Claim 15 (depends on 1) The non-volatile storage device of claim 1, wherein the second region is thicker than both the first region and the third region. ### Claim 16 (depends on 1) The non-volatile storage device of claim 1, wherein the diode is a P+/N−/P+ punch through diode. ### Claim 17 (depends on 1) The non-volatile storage device of claim 1, wherein the diode is an N+/P−/N+ punch through diode. ### Claim 18 (depends on 1) The non-volatile storage device of claim 1, wherein the first region and the third region each have a doping concentration of about 1.0×1021/cm3, and the second region has a doping concentration of about 7.0×1017/cm3. ### Claim 19 (depends on 1) The non-volatile storage device of claim 1, wherein the doping concentration in first region and the third region is about 1.0×1018/cm3 near the second region gradually increasing to about 1.0×1021/cm3 away from the second region. ### Claim 20 A non-volatile storage device comprising: a first plurality of conductors; a second plurality of conductors, one of the first conductors and one of the second conductors define a pair of conductors; a plurality of memory cells, each of the memory cells residing between one pair of the pairs of conductors, each of the memory cells including: a reversible resistivity-switching element; and a punch through diode in series with the reversible resistivity-switching element, the diode having a heavily doped first semiconductor region, a lightly doped second semiconductor region, and a heavily doped third semiconductor region, the second semiconductor region between the first semiconductor region and third semiconductor region, the doping profile in the first semiconductor region and the third semiconductor region is graded with the doping concentration being lowest near the second semiconductor region.